MS.3.P063 Aberration corrected TEM and Super-X STEM-EDXS characterization of high electron mobility transistor structures
Graff, A.
,
Simon-Najasek, M.
,
Altmann, F.
,
Dammann, M.
Keywords
:
GaN-HEMT, aberration corrected TEM, STEM-EDXS
Subjects
:
Materials Science (MS)
URN
:
urn:nbn:de:bvb:355-mc2013-603-2
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