MS.7.P207 Coupling effects of Ge/Si quantum dots studied by conductive atomic force microscopy and Kelvin probe force microscopy
Ye, F.
,
Zhang, Y.
,
Lv, Y.
,
Yang, X.
Keywords
:
Coupling effects, GeSi quantum dots, Conductive atomic force microscopy, Kelvin force microscopy
Subjects
:
Materials Science (MS)
URN
:
urn:nbn:de:bvb:355-mc2013-747-9
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